Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

RS Stock No.: 125-0532Brand: ToshibaManufacturers Part No.: TK10A60W,S4VX(M
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

₹ 609.15

₹ 121.83 Each (In a Pack of 5) (Exc. GST)

₹ 718.80

₹ 143.759 Each (In a Pack of 5) (inc. GST)

Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

5

Available in multiples of 5
5₹ 609.15
10₹ 1,218.30
15₹ 1,827.45
20₹ 2,436.60
25₹ 2,008.50
30₹ 2,410.20
35₹ 2,811.90
40₹ 3,213.60
45₹ 3,615.30
50₹ 3,903.50
55₹ 4,293.85
60₹ 4,684.20
65₹ 5,074.55
70₹ 5,464.90
75₹ 5,855.25
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 609.15

₹ 121.83 Each (In a Pack of 5) (Exc. GST)

₹ 718.80

₹ 143.759 Each (In a Pack of 5) (inc. GST)

Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M
Stock information temporarily unavailable.

5

Available in multiples of 5
5₹ 609.15
10₹ 1,218.30
15₹ 1,827.45
20₹ 2,436.60
25₹ 2,008.50
30₹ 2,410.20
35₹ 2,811.90
40₹ 3,213.60
45₹ 3,615.30
50₹ 3,903.50
55₹ 4,293.85
60₹ 4,684.20
65₹ 5,074.55
70₹ 5,464.90
75₹ 5,855.25

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 20₹ 121.83₹ 609.15
25 - 45₹ 80.34₹ 401.70
50 - 120₹ 78.07₹ 390.35
125 - 245₹ 76.09₹ 380.45
250+₹ 73.83₹ 369.15

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more