N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S

RS Stock No.: 133-2800Brand: ToshibaManufacturers Part No.: TK6P65W,RQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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₹ 364.00

₹ 36.40 Each (In a Pack of 10) (Exc. GST)

₹ 429.52

₹ 42.952 Each (In a Pack of 10) (inc. GST)

N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S

10

Available in multiples of 10
10₹ 364.00
20₹ 728.00
30₹ 1,092.00
40₹ 1,456.00
50₹ 1,820.00
60₹ 2,184.00
70₹ 2,548.00
80₹ 2,912.00
90₹ 3,276.00
100₹ 3,640.00
110₹ 4,004.00
120₹ 4,368.00
130₹ 4,732.00
140₹ 5,096.00
150₹ 5,460.00
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 364.00

₹ 36.40 Each (In a Pack of 10) (Exc. GST)

₹ 429.52

₹ 42.952 Each (In a Pack of 10) (inc. GST)

N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S
Stock information temporarily unavailable.

10

Available in multiples of 10
10₹ 364.00
20₹ 728.00
30₹ 1,092.00
40₹ 1,456.00
50₹ 1,820.00
60₹ 2,184.00
70₹ 2,548.00
80₹ 2,912.00
90₹ 3,276.00
100₹ 3,640.00
110₹ 4,004.00
120₹ 4,368.00
130₹ 4,732.00
140₹ 5,096.00
150₹ 5,460.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more