N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S

RS Stock No.: 133-2797Brand: ToshibaManufacturers Part No.: TK14G65W,RQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

8.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.35mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

4.46mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₹ 1,103.20

₹ 220.64 Each (In a Pack of 5) (Exc. GST)

₹ 1,301.78

₹ 260.355 Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S

5

Available in multiples of 5
5₹ 1,103.20
10₹ 2,206.40
15₹ 3,309.60
20₹ 4,412.80
25₹ 5,516.00
30₹ 6,619.20
35₹ 7,722.40
40₹ 8,825.60
45₹ 9,928.80
50₹ 11,032.00
55₹ 12,135.20
60₹ 13,238.40
65₹ 14,341.60
70₹ 15,444.80
75₹ 16,548.00
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 1,103.20

₹ 220.64 Each (In a Pack of 5) (Exc. GST)

₹ 1,301.78

₹ 260.355 Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S
Stock information temporarily unavailable.

5

Available in multiples of 5
5₹ 1,103.20
10₹ 2,206.40
15₹ 3,309.60
20₹ 4,412.80
25₹ 5,516.00
30₹ 6,619.20
35₹ 7,722.40
40₹ 8,825.60
45₹ 9,928.80
50₹ 11,032.00
55₹ 12,135.20
60₹ 13,238.40
65₹ 14,341.60
70₹ 15,444.80
75₹ 16,548.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

8.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.35mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

4.46mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more