GaAs silicon phototransisitor,ST23G 5mm

RS Stock No.: 195-372Brand: KodenshiManufacturers Part No.: ST23G, C
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Technical Document

Specifications

Brand

Kodenshi

Spectrums Detected

Infrared

Typical Fall Time

4.8µs

Typical Rise Time

3.2µs

Maximum Light Current

20mA

Maximum Dark Current

100nA

Angle of Half Sensitivity

30 °

Polarity

NPN

Number of Pins

2

Mounting Type

Through Hole

Package Type

5mm (T-1 3/4)

Dimensions

4.6 x 2.54 x 4.6mm

Collector Current

40mA

Spectral Range of Sensitivity

500 → 1050 nm

Minimum Wavelength Detected

500nm

Maximum Wavelength Detected

1050nm

Series

ST

Length

4.6mm

Width

2.54mm

Height

4.6mm

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P.O.A.

GaAs silicon phototransisitor,ST23G 5mm

1

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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

P.O.A.

GaAs silicon phototransisitor,ST23G 5mm
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

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Technical Document

Specifications

Brand

Kodenshi

Spectrums Detected

Infrared

Typical Fall Time

4.8µs

Typical Rise Time

3.2µs

Maximum Light Current

20mA

Maximum Dark Current

100nA

Angle of Half Sensitivity

30 °

Polarity

NPN

Number of Pins

2

Mounting Type

Through Hole

Package Type

5mm (T-1 3/4)

Dimensions

4.6 x 2.54 x 4.6mm

Collector Current

40mA

Spectral Range of Sensitivity

500 → 1050 nm

Minimum Wavelength Detected

500nm

Maximum Wavelength Detected

1050nm

Series

ST

Length

4.6mm

Width

2.54mm

Height

4.6mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in