Fairchild ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole
Technical Document
Specifications
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 4.7 x 16.3mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₹ 1,069.50
₹ 213.90 Each (In a Pack of 5) (Exc. GST)
₹ 1,262.01
₹ 252.402 Each (In a Pack of 5) (inc. GST)
Standard
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 1,069.50
₹ 213.90 Each (In a Pack of 5) (Exc. GST)
₹ 1,262.01
₹ 252.402 Each (In a Pack of 5) (inc. GST)
Standard
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | ₹ 213.90 | ₹ 1,069.50 |
| 10 - 95 | ₹ 204.26 | ₹ 1,021.30 |
| 100 - 495 | ₹ 196.10 | ₹ 980.50 |
| 500 - 995 | ₹ 193.62 | ₹ 968.10 |
| 1000+ | ₹ 191.20 | ₹ 956.00 |
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Technical Document
Specifications
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 4.7 x 16.3mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products