Hex SiC N-Channel MOSFET, 87 A, 1200 V, 28-Pin Six Pack Wolfspeed CCS050M12CM2
Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
87 A
Maximum Drain Source Voltage
1200 V
Package Type
Six Pack
Mounting Type
Screw Mount
Pin Count
28
Maximum Drain Source Resistance
63 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
312 W
Transistor Configuration
3 Phase
Maximum Gate Source Voltage
-10 V, +25 V
Number of Elements per Chip
6
Maximum Operating Temperature
+150 °C
Length
108mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Width
47mm
Transistor Material
SiC
Forward Diode Voltage
2.3V
Height
17mm
Product details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
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P.O.A.
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
P.O.A.
1
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
87 A
Maximum Drain Source Voltage
1200 V
Package Type
Six Pack
Mounting Type
Screw Mount
Pin Count
28
Maximum Drain Source Resistance
63 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
312 W
Transistor Configuration
3 Phase
Maximum Gate Source Voltage
-10 V, +25 V
Number of Elements per Chip
6
Maximum Operating Temperature
+150 °C
Length
108mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Width
47mm
Transistor Material
SiC
Forward Diode Voltage
2.3V
Height
17mm
Product details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products