Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Module Wolfspeed CCS020M12CM2

RS Stock No.: 162-9726Brand: WolfspeedManufacturers Part No.: CCS020M12CM2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

1200 V

Package Type

Module

Mounting Type

Screw Mount

Pin Count

28

Maximum Drain Source Resistance

208 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

167 W

Transistor Configuration

3 Phase

Maximum Gate Source Voltage

-10 V, +25 V

Width

47mm

Number of Elements per Chip

6

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

108mm

Typical Gate Charge @ Vgs

61.5 nC @ 20 V, 61.5 nC @ 5 V

Height

17mm

Forward Diode Voltage

2.3V

Minimum Operating Temperature

-40 °C

Country of Origin

China

Product details

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

₹ 30,549.01

Each (In a Box of 10) (Exc. GST)

₹ 36,047.832

Each (In a Box of 10) (Including GST)

Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Module Wolfspeed CCS020M12CM2
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

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₹ 30,549.01

Each (In a Box of 10) (Exc. GST)

₹ 36,047.832

Each (In a Box of 10) (Including GST)

Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Module Wolfspeed CCS020M12CM2
Stock information temporarily unavailable.
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

1200 V

Package Type

Module

Mounting Type

Screw Mount

Pin Count

28

Maximum Drain Source Resistance

208 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

167 W

Transistor Configuration

3 Phase

Maximum Gate Source Voltage

-10 V, +25 V

Width

47mm

Number of Elements per Chip

6

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

108mm

Typical Gate Charge @ Vgs

61.5 nC @ 20 V, 61.5 nC @ 5 V

Height

17mm

Forward Diode Voltage

2.3V

Minimum Operating Temperature

-40 °C

Country of Origin

China

Product details

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed