Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Package Type
Module
Mounting Type
Screw Mount
Pin Count
28
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
167 W
Transistor Configuration
3 Phase
Maximum Gate Source Voltage
-10 V, +25 V
Width
47mm
Number of Elements per Chip
6
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
108mm
Typical Gate Charge @ Vgs
61.5 nC @ 20 V, 61.5 nC @ 5 V
Height
17mm
Forward Diode Voltage
2.3V
Minimum Operating Temperature
-40 °C
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
Ultra low loss high-frequency operation
Ease of paralleling due to SiC characteristics
Normally-off, fail-safe operation
Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
Stock information temporarily unavailable.
Please check again later.
₹ 30,549.01
Each (In a Box of 10) (Exc. GST)
₹ 36,047.832
Each (In a Box of 10) (Including GST)
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 30,549.01
Each (In a Box of 10) (Exc. GST)
₹ 36,047.832
Each (In a Box of 10) (Including GST)
10
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Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Package Type
Module
Mounting Type
Screw Mount
Pin Count
28
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
167 W
Transistor Configuration
3 Phase
Maximum Gate Source Voltage
-10 V, +25 V
Width
47mm
Number of Elements per Chip
6
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
108mm
Typical Gate Charge @ Vgs
61.5 nC @ 20 V, 61.5 nC @ 5 V
Height
17mm
Forward Diode Voltage
2.3V
Minimum Operating Temperature
-40 °C
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
Ultra low loss high-frequency operation
Ease of paralleling due to SiC characteristics
Normally-off, fail-safe operation
Copper baseplate and aluminium nitride insulator reduce thermal requirements