Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2

RS Stock No.: 916-3872Brand: WolfspeedManufacturers Part No.: CAS300M12BM2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

404 A

Maximum Drain Source Voltage

1200 V

Package Type

Half Bridge

Mounting Type

Screw Mount

Pin Count

7

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

1.66 kW

Transistor Configuration

Series

Maximum Gate Source Voltage

-10 V, +25 V

Width

61.4mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Length

106.4mm

Typical Gate Charge @ Vgs

1025 nC @ 20 V, 1025 nC @ 5 V

Number of Elements per Chip

2

Forward Diode Voltage

2.5V

Height

30mm

Product details

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed

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₹ 84,471.23

Each (Exc. GST)

₹ 99,676.05

Each (Including GST)

Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 84,471.23

Each (Exc. GST)

₹ 99,676.05

Each (Including GST)

Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

404 A

Maximum Drain Source Voltage

1200 V

Package Type

Half Bridge

Mounting Type

Screw Mount

Pin Count

7

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

1.66 kW

Transistor Configuration

Series

Maximum Gate Source Voltage

-10 V, +25 V

Width

61.4mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Length

106.4mm

Typical Gate Charge @ Vgs

1025 nC @ 20 V, 1025 nC @ 5 V

Number of Elements per Chip

2

Forward Diode Voltage

2.5V

Height

30mm

Product details

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed