Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Typical Gate Charge @ Vgs
17.3 nC @ 15 V
Width
21.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Height
5.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Stock information temporarily unavailable.
Please check again later.
₹ 738.84
Each (In a Tube of 30) (Exc. GST)
₹ 871.831
Each (In a Tube of 30) (Including GST)
30
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 738.84
Each (In a Tube of 30) (Exc. GST)
₹ 871.831
Each (In a Tube of 30) (Including GST)
30
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Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Typical Gate Charge @ Vgs
17.3 nC @ 15 V
Width
21.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Height
5.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation