Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
900 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Width
10.99mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Typical Gate Charge @ Vgs
30 nC @ 15 V
Length
10.23mm
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.4V
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
MOSFET Transistors, Wolfspeed
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₹ 1,100.63
Each (In a Tube of 50) (Exc. GST)
₹ 1,298.743
Each (In a Tube of 50) (Including GST)
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 1,100.63
Each (In a Tube of 50) (Exc. GST)
₹ 1,298.743
Each (In a Tube of 50) (Including GST)
50
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Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
900 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Width
10.99mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Typical Gate Charge @ Vgs
30 nC @ 15 V
Length
10.23mm
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.4V
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation