SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M1000170D

RS Stock No.: 904-7345Brand: WolfspeedManufacturers Part No.: C2M1000170D
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

1700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

13 nC @ 20 V, 13 nC @ 5 V

Width

5.21mm

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.8V

Height

21.1mm

Country of Origin

China

Product details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

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₹ 946.01

Each (Exc. GST)

₹ 1,116.29

Each (Including GST)

SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M1000170D
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 946.01

Each (Exc. GST)

₹ 1,116.29

Each (Including GST)

SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M1000170D
Stock information temporarily unavailable.
Select packaging type

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quantityUnit price
1 - 4₹ 946.01
5 - 9₹ 927.09
10 - 29₹ 810.72
30 - 89₹ 735.19
90+₹ 720.49

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

1700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

13 nC @ 20 V, 13 nC @ 5 V

Width

5.21mm

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.8V

Height

21.1mm

Country of Origin

China

Product details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed