SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0040120D
Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
115 nC @ 20 V, 115 nC @ 5 V
Width
5.21mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Height
21.1mm
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
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₹ 4,346.25
Each (Exc. GST)
₹ 5,128.57
Each (Including GST)
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 4,346.25
Each (Exc. GST)
₹ 5,128.57
Each (Including GST)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 4 | ₹ 4,346.25 |
| 5 - 9 | ₹ 4,083.38 |
| 10 - 29 | ₹ 3,820.51 |
| 30 - 59 | ₹ 3,744.10 |
| 60+ | ₹ 3,669.22 |
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Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
115 nC @ 20 V, 115 nC @ 5 V
Width
5.21mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Height
21.1mm
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products