Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
PowerPAK 8 x 8
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
135 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
202 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
8.1mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
8.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Series
E Series
Minimum Operating Temperature
-55 °C
Country of Origin
Taiwan, Province Of China
Product details
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
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₹ 437.30
Each (Exc. GST)
₹ 516.01
Each (Including GST)
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 437.30
Each (Exc. GST)
₹ 516.01
Each (Including GST)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | ₹ 437.30 |
10 - 49 | ₹ 367.53 |
50 - 99 | ₹ 346.44 |
100 - 249 | ₹ 301.37 |
250+ | ₹ 290.73 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
PowerPAK 8 x 8
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
135 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
202 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
8.1mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
8.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Series
E Series
Minimum Operating Temperature
-55 °C
Country of Origin
Taiwan, Province Of China
Product details
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses