N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXYS IXFN48N60P

RS Stock No.: 194-473Brand: IXYSManufacturers Part No.: IXFN48N60P
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Package Type

SOT-227

Series

HiperFET, Polar

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.23mm

Width

25.42mm

Transistor Material

Si

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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₹ 2,506.78

Each (Exc. GST)

₹ 2,958.00

Each (Including GST)

N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXYS IXFN48N60P
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 2,506.78

Each (Exc. GST)

₹ 2,958.00

Each (Including GST)

N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXYS IXFN48N60P
Stock information temporarily unavailable.
Select packaging type

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quantityUnit price
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5+₹ 2,440.82

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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Package Type

SOT-227

Series

HiperFET, Polar

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

150 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.23mm

Width

25.42mm

Transistor Material

Si

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more