Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
850 V
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.79 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.31mm
Number of Elements per Chip
1
Length
20.29mm
Typical Gate Charge @ Vgs
340 @ 10 V nC
Maximum Operating Temperature
+150 °C
Height
26.59mm
Series
HiperFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
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₹ 3,735.74
Each (Exc. GST)
₹ 4,408.17
Each (Including GST)
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 3,735.74
Each (Exc. GST)
₹ 4,408.17
Each (Including GST)
1
Buy in bulk
quantity | Unit price |
---|---|
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Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
850 V
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.79 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.31mm
Number of Elements per Chip
1
Length
20.29mm
Typical Gate Charge @ Vgs
340 @ 10 V nC
Maximum Operating Temperature
+150 °C
Height
26.59mm
Series
HiperFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V