N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2

RS Stock No.: 146-4401Brand: IXYSManufacturers Part No.: IXFB150N65X2
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

650 V

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.56 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.31mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

20.26mm

Typical Gate Charge @ Vgs

355 nC @ 10 V nC

Height

26.59mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

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P.O.A.

N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

P.O.A.

N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

650 V

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.56 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.31mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

20.26mm

Typical Gate Charge @ Vgs

355 nC @ 10 V nC

Height

26.59mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V