N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X

RS Stock No.: 146-4242Brand: IXYSManufacturers Part No.: IXFA4N85X
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

850 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

10.92mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.41mm

Typical Gate Charge @ Vgs

7 @ 10 V nC

Height

4.7mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

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P.O.A.

N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

P.O.A.

N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

850 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

10.92mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.41mm

Typical Gate Charge @ Vgs

7 @ 10 V nC

Height

4.7mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V