N-Channel MOSFET Transistor, 88 A, 200 V, 3-Pin TO-220 Infineon IPP110N20N3GXKSA1

RS Stock No.: 911-4899Brand: InfineonManufacturers Part No.: IPP110N20N3GXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Height

9.45mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Country of Origin

Germany

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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₹ 509.40

Each (In a Tube of 50) (Exc. GST)

₹ 601.092

Each (In a Tube of 50) (Including GST)

N-Channel MOSFET Transistor, 88 A, 200 V, 3-Pin TO-220 Infineon IPP110N20N3GXKSA1
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

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₹ 509.40

Each (In a Tube of 50) (Exc. GST)

₹ 601.092

Each (In a Tube of 50) (Including GST)

N-Channel MOSFET Transistor, 88 A, 200 V, 3-Pin TO-220 Infineon IPP110N20N3GXKSA1
Stock information temporarily unavailable.
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Height

9.45mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Country of Origin

Germany

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.