Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
62 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Maximum Power Dissipation
188 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1800pF
Maximum Operating Temperature
+175 °C
Energy Rating
0.88mJ
Product details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₹ 256.80
Each (In a Pack of 10) (Exc. GST)
₹ 303.024
Each (In a Pack of 10) (Including GST)
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 256.80
Each (In a Pack of 10) (Exc. GST)
₹ 303.024
Each (In a Pack of 10) (Including GST)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 10 | ₹ 256.80 | ₹ 2,568.00 |
20 - 40 | ₹ 251.67 | ₹ 2,516.70 |
50 - 90 | ₹ 246.88 | ₹ 2,468.80 |
100 - 240 | ₹ 222.15 | ₹ 2,221.50 |
250+ | ₹ 215.96 | ₹ 2,159.60 |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
62 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Maximum Power Dissipation
188 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1800pF
Maximum Operating Temperature
+175 °C
Energy Rating
0.88mJ
Product details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.